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SST215 - MOSFET

Download the SST215 datasheet PDF. This datasheet also covers the SST211 variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SD211DE/SST211 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video and high-frequency applications.

The SD211 may be used for a ±5-V analog switching or as a high speed driver of the SD214.

Key Features

  • Ultra-High Speed Switching.
  • ION: 1ns.
  • Ultra-Low Reverse Capacitance: 0.2pF.
  • Low Guaranteed rDS @5V.
  • Low Turn-On Threshold Voltage.
  • N-Channel Enhancement Mode Benefits.
  • High-Speed System Performance.
  • Low Insertion Loss at High Frequencies.
  • Low Transfer Signal Loss.
  • Simple Driver Requirement.
  • Single Supply Operation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SST211-LINEARSYSTEMS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SST215
Manufacturer LINEAR SYSTEMS
File Size 307.71 KB
Description MOSFET
Datasheet download datasheet SST215 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SST215 N-Channel Lateral DMOS FETs Siliconix
SST215 N-Channel Lateral DMOS FETs TEMIC
SST2100 N-Channel Depletion-Mode Lateral DMOS FETs Siliconix
SST211 N-Channel Lateral DMOS FETs Siliconix
SST211 N-Channel Lateral DMOS FETs TEMIC

Other Datasheets by LINEAR SYSTEMS

Part Number Description
SST210 N-CHANNEL LATERAL DMOS SWITCH
SST211 MOSFET
SST213 MOSFET
SST214 N-CHANNEL LATERAL DMOS SWITCH
SST111 SINGLE N-CHANNEL JFET SWITCH

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED PRODUCT SUMMARY PART NUMBER SD211DE SD213DE SD215DE SST211 SST213 SST215 V(BR)DS Min (V) 30 10 20 30 10 20 V(GS)th Max (V) 1.5 1.5 1.5 1.5 1.5 1.5 rDS(on) Max (Ω) 45 @ VGS=10V 45 @ VGS=10V 45 @ VGS=10V 50 @ VGS=10V 50 @ VGS=10V 50 @ VGS=10V C rss Max (pF) 0.5 0.5 0.5 0.5 0.5 0.5 tON Max (ns) 2 2 2 2 2 2 Features • Ultra-High Speed Switching—ION: 1ns • Ultra-Low Reverse Capacitance: 0.